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Proceedings Paper

Manufacturing and inspection of OPC and PSM masks
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Paper Abstract

With optical lithography prevailing into the year 2000, super-resolution processes pose a multitude of new challenges to the lithographer. Isolated to nested feature bias calls for 'pre- distorting' the photomask to compensate for proximity effects and print and etch biases in the mask and wafer manufacturing process. OPC (optical proximity correction) techniques have become a reality for sub-halfmicron lithography, and have initiated many discussions looking at the manufacturability of OPC masks. Regaining the lost DOF (depth of focus) due to ever shorter printing wavelength, and increasing yields by expanding process latitude have many IC manufacturers looking into PSMs (phase shift masks) as a viable but expensive enhancement technique for several [2-6] layers of the total [18-26] device mask set. This paper addresses manufacturability issues of various combinations of 'enhancement' masks.

Paper Details

Date Published: 8 December 1995
PDF: 15 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228214
Show Author Affiliations
Wolfgang Staud, Photronics, Inc. (United States)
Karen Huang, Photronics, Inc. (United States)
Patricia D. Beard, Photronics, Inc. (United States)
Ofer Hebron, Orbot Instruments, Inc. (United States)
Yair Eran, Orbot Instruments Ltd. (Israel)

Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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