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Proceedings Paper

Good OPC, where will this drive mask CD tolerance and mask grid size
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Paper Abstract

At low k1 factors, optical proximity correction (OPC) is used to correct line size such that what is delivered by the lithography process is closer to the design dimension than an uncorrected process would deliver. OPC is usually derived for perfect masks and exposures. Random variation of the mask critical dimension (CD), wafer exposure latitude, and wafer defocus are examined for their effects on an OPC mask. Expected CD variation in the aerial image is given for each of these variables. Examining these variables will also give insight as to how fine an OPC can realistically be obtained, and how fine a grid size is needed in the manufacture of the mask.

Paper Details

Date Published: 8 December 1995
PDF: 9 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228213
Show Author Affiliations
Donald J. Samuels, IBM Corp. (United States)
Wilhelm Maurer, Siemens AG (United States)
Timothy R. Farrell, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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