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Proceedings Paper

Resist charging in electron-beam lithography
Author(s): Weidong Liu; Roger Fabian W. Pease
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Paper Abstract

We have directly measured the surface potential of a resist film under a wide variety of e- beam exposure conditions. Here we describe results after extending the range of primary beam energy down to 1 keV; the magnitude of surface potential reaches a maximum at about 1.6 keV on 0.4 micrometer SAL601 resist. We also measured the secondary electron emission coefficient (Cse) of the same sample for the primary beam energy from 1 keV to 20 keV. Below 1 keV Cse is larger than 1 and it decreases with increased beam energy. Above 7 keV Cse becomes a constant about 0.2. Preliminary experimental results for electron beam induced conductivity indicated minimal induced current. Similar experiments were carried out on PBS resist samples and shown the similar results. Together with Monte Carlo simulation of the backscattered electrons and distribution of trapped charges, these results are used to quantitatively explain the charging behavior of the resist.

Paper Details

Date Published: 8 December 1995
PDF: 11 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228205
Show Author Affiliations
Weidong Liu, Stanford Univ. (United States)
Roger Fabian W. Pease, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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