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Proceedings Paper

Comprehensive simulation study of the photomask defects printability
Author(s): Linard Karklin
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Paper Abstract

Optical lithography will continue to be a leading patterning technology for 256 Mb and 1 GB DRAM production. As the device size diminishes, all the links of the technological chain must be significantly improved. Photomask technology then becomes one of the critical issues for the semiconductor industry. It is already admitted that only a combination of PSM technology coupled with OPC and state-of-the-art illumination schemes will allow the printing of 0.18 micrometer patterns using optical lithography. It has been shown that new patterning techniques may significantly degenerate mask defect tolerance. This will certainly require a new look at the mask defects detection and classification. A new 'process window' concept proposed by KLA has been applied to the mask defects printability study. Both conventional (chrome) and phase shifted (half-tone) masks have been examined. OPC corrected layouts were studied with a variety of defect types, sizes, and locations. 'Ideal' vs 'real' (corner rounding) reticles were tested. In addition, the impact of substrate reflectivity and photoresist contrast on defect printability has been determined using full scale 3D simulation. We found that implementing the OPC technique may produce new types of defects, and therefore requires a new defect classification.

Paper Details

Date Published: 8 December 1995
PDF: 15 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228203
Show Author Affiliations
Linard Karklin, LK Consulting (United States)

Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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