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Proceedings Paper

Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography
Author(s): Hung-Eil Kim; Chang-Nam Ahn; KeunYoung Kim; Ki-Ho Baik
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Paper Abstract

Alternating phase shift mask (PSM) is very effective to memory devices which have highly repeated patterns. In order to apply the alternating PSM to a real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also designed various hard defects to check defect printability on a wafer. Using i-line lithography (0.50 NA, 0.46 sigma) with alternating PSM, we obtained a useful DOF of 1.2 micrometer for a bit line of 256 M DRAM. The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.

Paper Details

Date Published: 8 December 1995
PDF: 13 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228197
Show Author Affiliations
Hung-Eil Kim, Hyundai Electronics (South Korea)
Chang-Nam Ahn, Hyundai Electronics (South Korea)
KeunYoung Kim, Hyundai Electronics (South Korea)
Ki-Ho Baik, Hyundai Electronics (South Korea)


Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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