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Proceedings Paper

Aerial image metrology for OPC modeling and mask qualification
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Paper Abstract

As nodes become smaller and smaller, the OPC applied to enable these nodes becomes more and more sophisticated. This trend peaks today in curve-linear OPC approaches that are currently starting to appear on the roadmap. With this sophistication of OPC, the mask pattern complexity increases. CD-SEM based mask qualification strategies as they are used today are starting to struggle to provide a precise forecast of the printing behavior of a mask on wafer. An aerial image CD measurement performed on ZEISS Wafer-Level CD system (WLCD) is a complementary approach to mask CD-SEMs to judge the lithographical performance of the mask and its critical production features. The advantage of the aerial image is that it includes all optical effects of the mask such as OPC, SRAF, 3D mask effects, once the image is taken under scanner equivalent illumination conditions. Additionally, it reduces the feature complexity and analyzes the printing relevant CD.

Paper Details

Date Published: 28 September 2017
PDF: 14 pages
Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460V (28 September 2017); doi: 10.1117/12.2281886
Show Author Affiliations
Ao Chen, GLOBALFOUNDRIES Singapore (Singapore)
Yee Mei Foong, GLOBALFOUNDRIES Singapore (Singapore)
Thomas Thaler, Carl Zeiss SMT GmbH (Germany)
Ute Buttgereit, Carl Zeiss SMT GmbH (Germany)
Angeline Chung, Mentor Graphics (Singapore)
Andrew Burbine, Mentor Graphics (United States)
John Sturtevant, Mentor Graphics (United States)
Chris Clifford, Mentor Graphics (United States)
Kostas Adam, Mentor Graphics (United States)
Peter De Bisschop, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10446:
33rd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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