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Proceedings Paper

Secondary electron interactions of chemically amplified EUV photoresists (Conference Presentation)
Author(s): Steven Grzeskowiak; Amrit K. Narasimhan; Gregory H. Denbeaux
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Paper Abstract

Chemically amplified extreme ultraviolet (EUV, ~13.5 nm) photoresists are typically comprised of a photoacid generator (PAG) in a polymer matrix. During the photolithographic process, a photoresist is exposed to EUV photons; it is believed that electrons and holes generated during exposure are the major source of acid production between resist components. It has been shown that more easily reduced PAGs have higher acid yields within the same polymer matrix. This correlation of reducibility vs. acid yield should be consistent between PAGs regardless of the polymer matrix. This work investigates PAG reducibility compared to acid yield for several PAGs contained in various polymer matrices. Reduction potentials of PAGs are determined through cyclic voltammetry and electrolysis. An acid indicator, coumarin 6, and an established outgassing technique are used to determine the number of acids generated for low energy (80 eV) electron exposures for given polymer matrices. These results are compared to analogous EUV exposures.

Paper Details

Date Published: 16 October 2017
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Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500I (16 October 2017); doi: 10.1117/12.2281810
Show Author Affiliations
Steven Grzeskowiak, SUNY CNSE/SUNYIT (United States)
Amrit K. Narasimhan, SUNY CNSE/SUNYIT (United States)
Gregory H. Denbeaux, SUNY CNSE/SUNYIT (United States)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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