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Full-chip GPU-accelerated curvilinear EUV dose and shape correction
Author(s): Ryan Pearman; Abhishek Shendre; Oleg Syrel; Harold Zable; Ali Bouaricha ; Mariusz Niewczas ; Bo Su ; Leo Pang ; Aki Fujimura
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Paper Abstract

With both 193i multiple patterning and EUV technologies, the constraints on the mask manufacturability are becoming increasingly stringent. The necessity for understanding curvilinear shapes implicitly in design (for ILT and EUV) or OPC correction (corner-rounding effects) along with new multi-beam mask writing systems mean the mask manufacturers are at an inflection point: whether the mask shapes are described as curvilinear targets or complex rectilinear targets, the actual mask shapes after exposure are curvilinear and must be accounted for correctly for wafer lithography. We present a GPU-accelerated intrinsically curvilinear mask data preparation system, compatible with both VSB and multi-beam systems, that is capable of full-ship simultaneous shape and dose correction using arbitrary (non-Gaussian) kernels for model shape and dose effects.

Paper Details

Date Published: 31 October 2017
PDF: 9 pages
Proc. SPIE 10451, Photomask Technology, 1045108 (31 October 2017); doi: 10.1117/12.2281686
Show Author Affiliations
Ryan Pearman, D2S, Inc. (United States)
Abhishek Shendre, D2S, Inc. (United States)
Oleg Syrel, D2S, Inc. (United States)
Harold Zable, D2S, Inc. (United States)
Ali Bouaricha , D2S, Inc. (United States)
Mariusz Niewczas , D2S, Inc. (United States)
Bo Su , D2S, Inc. (United States)
Leo Pang , D2S, Inc. (United States)
Aki Fujimura, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 10451:
Photomask Technology
Peter D. Buck; Emily E. Gallagher, Editor(s)

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