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Proceedings Paper

Contributions by blank vendors to critical dimension and defect errors
Author(s): James Unruh; Benjamin George Eynon
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Paper Abstract

As wafer fab technology proceeds into smaller images over larger field sizes, there is a need for tighter critical dimension (CD) uniformity and smaller allowable defect sizes. The maskmaker is required to reduce these sources of error as much as possible at the reticle level. As the lithography and process contributions are reduced, contribution from the mask blank itself becomes significant. Selection of the best vendor for optimum CD and defect performance becomes critical. Unfortunately, the best vendor for CD uniformity may not be the best for defect density on certain product types, and vice versa. An additional complication is that the most critical specifications are required over larger areas of 6 multiplied by .250 substrates which have not yet been optimized by blank suppliers.

Paper Details

Date Published: 8 December 1995
PDF: 8 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228160
Show Author Affiliations
James Unruh, Photronics, Inc. (United States)
Benjamin George Eynon, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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