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Proceedings Paper

Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers
Author(s): Linyong Pang; Yutetsu Takatsukasa; Daisuke Hara; Michael Pomerantsev; Bo Su; Aki Fujimura
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Paper Abstract

Inverse Lithography Technology (ILT) is becoming the choice for Optical Proximity Correction (OPC) of advanced technology nodes in IC design and production. Multi-beam mask writers promise significant mask writing time reduction for complex ILT style masks. Before multi-beam mask writers become the main stream working tools in mask production, VSB writers will continue to be the tool of choice to write both curvilinear ILT and Manhattanized ILT masks. To enable VSB mask writers for complex ILT style masks, model-based mask process correction (MB-MPC) is required to do the following: 1). Make reasonable corrections for complex edges for those features that exhibit relatively large deviations from both curvilinear ILT and Manhattanized ILT designs. 2). Control and manage both Edge Placement Errors (EPE) and shot count. 3. Assist in easing the migration to future multi-beam mask writer and serve as an effective backup solution during the transition. In this paper, a solution meeting all those requirements, MB-MPC with GPU acceleration, will be presented. One model calibration per process allows accurate correction regardless of the target mask writer.

Paper Details

Date Published: 13 July 2017
PDF: 9 pages
Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 1045407 (13 July 2017); doi: 10.1117/12.2281110
Show Author Affiliations
Linyong Pang, D2S, Inc. (United States)
Yutetsu Takatsukasa, D2S, Inc. (United States)
Daisuke Hara, D2S, Inc. (United States)
Michael Pomerantsev, D2S, Inc. (United States)
Bo Su, D2S, Inc. (United States)
Aki Fujimura, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 10454:
Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology
Kiwamu Takehisa, Editor(s)

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