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Proceedings Paper

Taking a SHARP look at mask 3D effects
Author(s): Markus P. Benk; Weilun Chao; Ryan Miyakawa; Kenneth Goldberg; Patrick Naulleau
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Paper Abstract

Mask 3D effects are an area of active research in EUV mask technology. Mask-side numerical aperture, illumination, feature size and absorber thickness are key factors modulating mask 3D effects and affecting printability and process window. Variable mask-side NA and flexible illumination make the SHARP actinic EUV microscope a powerful instrument for the study of mask 3D effects. We show an application example, comparing mask 3D effects for a standard Tantalum Nitride absorber and a thinner, 40-nm Nickel absorber. Data is presented for 0.33 4xNA and anamorphic 0.55 4x/8xNA. The influence of different illumination settings on mask 3D effects is discussed.

Paper Details

Date Published: 27 October 2017
PDF: 19 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500Y (27 October 2017); doi: 10.1117/12.2281109
Show Author Affiliations
Markus P. Benk, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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