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Proceedings Paper

Frequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance
Author(s): Oleksandr V. Osadchuk; Iaroslav O. Osadchuk; Batyrbek Suleimenov; Tomasz Zyska; Abenov Arman; Akmaral Tleshova; Żaklin Grądz
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Paper Abstract

In the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenso sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa.

Paper Details

Date Published: 7 August 2017
PDF: 9 pages
Proc. SPIE 10445, Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017, 1044559 (7 August 2017); doi: 10.1117/12.2280958
Show Author Affiliations
Oleksandr V. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Iaroslav O. Osadchuk, Vinnytsia National Technical Univ. (Ukraine)
Batyrbek Suleimenov, Kazakh National Research Technical Univ. after K. I. Satpaev (Kazakhstan)
Tomasz Zyska, Lublin Univ. of Technology (Poland)
Abenov Arman, Alatau Zharyk Co. JSC (Kazakhstan)
Akmaral Tleshova, Al-Farabi Kazakh National Univ. (Kazakhstan)
Żaklin Grądz, Lublin Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10445:
Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017
Ryszard S. Romaniuk; Maciej Linczuk, Editor(s)

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