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Proceedings Paper

Dimensional measurement sensitivity analysis for a MoSi photomask using DUV reflection scatterfield imaging microscopy
Author(s): Martin Y. Sohn; Dong Ryoung Lee; Bryan M. Barnes; Ronald Dixson; Richard M. Silver; Sang-Soo Choi
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Paper Abstract

A critical challenge in optical critical dimension metrology, that requires high measurement sensitivity as well as high throughput, is the dimensional measurements of features sized below the optical resolution limit. This paper investigates the relationships among dimensional sensitivity and key illumination beam conditions (e.g., angular illumination, partial coherence) for photomask feature characterization. Scatterfield images at the edge areas of multiple line structures on a Molybdenum Silicide (MoSi) photomask are analyzed to establish sensitivity to dimensional changes. Actinic scatterfield imaging experiments for these features are performed using the NIST 193 nm Scatterfield Microscope, designed to enable engineered illumination beams at the target. Illumination configurations that improve sensitivity are identified from imaging edges of multiple line targets having linewidths and spaces of about 1/3 wavelength.

Paper Details

Date Published: 8 November 2017
PDF: 10 pages
Proc. SPIE 10451, Photomask Technology, 1045112 (8 November 2017); doi: 10.1117/12.2280782
Show Author Affiliations
Martin Y. Sohn, National Institute of Standards and Technology (United States)
Dong Ryoung Lee, National Institute of Standards and Technology (United States)
Bryan M. Barnes, National Institute of Standards and Technology (United States)
Ronald Dixson, National Institute of Standards and Technology (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)
Sang-Soo Choi, Photronics, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10451:
Photomask Technology
Peter D. Buck; Emily E. Gallagher, Editor(s)

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