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Proceedings Paper

Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices
Author(s): K. Murawski; K. Grodecki; A. Henig; K. Michalczewski; Ł. Kubiszyn; D. Benyahia; B. Jankiewicz; B. Budner; A. Wysmolek; P. Martyniuk
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Paper Abstract

In this work we compare two superlattices: InAs/GaSb (sample A) and InAs/InAsSb (sample B). Both samples were grown in MBE VIGO/ MUT laboratory on 2 inch (001) GaAs substrate using MBE technique. We characterized quality and thickness of the samples using three methods: photoluminescence, X-ray diffraction (XRD) and Raman scattering. Period of superlattice layers was obtained using Raman scattering and XRD measurements. For sample A it was equal 5.3 nm and 4.76 nm for InAs and GaSb layers respectively, for sample B 8.3 nm and 9.4 nm. Photoluminescence spectrum for sample A exhibits two peaks: band gap peak at 0.5 eV and deep state peak at 0.25 eV. Spectrum for sample B consists of one band gap peak at 0.17 eV.

Paper Details

Date Published: 1 September 2017
PDF: 5 pages
Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1045507 (1 September 2017); doi: 10.1117/12.2280729
Show Author Affiliations
K. Murawski, Military Univ. of Technology (Poland)
K. Grodecki, Military Univ. of Technology (Poland)
A. Henig, Military Univ. of Technology (Poland)
K. Michalczewski, Military Univ. of Technology (Poland)
Ł. Kubiszyn, VIGO System S.A. (Poland)
D. Benyahia, Military Univ. of Technology (Poland)
B. Jankiewicz, Military Univ. of Technology (Poland)
B. Budner, Military Univ. of Technology (Poland)
A. Wysmolek, Univ. of Warsaw (Poland)
P. Martyniuk, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10455:
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

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