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Proceedings Paper

EUV source optimization driven by fundamental diffraction considerations
Author(s): Jo Finders; Eelco van Setten; Par Broman; Erik Wang; John McNamara; Paul van Adrichem
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Paper Abstract

Illumination Source Optimization is a very fundamental task for the lithographer. For upcoming EUV lithography we expect quite some commonality and similar source shapes to be used when comparing with immersion lithography, but we also expect some new aspects specific to EUV. In this paper we present a methodology to predict optimum source shapes for simple test patterns by studying basic diffraction properties. This knowledge can then be used in understanding the outcome of real life optimizations by full scale Source Mask Optimization routines, where the lithographer will take many clips and many additional aspects (e.g. illuminator efficiency) into account.

Paper Details

Date Published: 26 October 2017
PDF: 14 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500C (26 October 2017); doi: 10.1117/12.2280717
Show Author Affiliations
Jo Finders, ASML Netherlands B.V. (Netherlands)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Par Broman, ASML Netherlands B.V. (Netherlands)
Erik Wang, ASML Netherlands B.V. (Netherlands)
John McNamara, ASML Netherlands B.V. (Netherlands)
Paul van Adrichem, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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