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Proceedings Paper

EUV mask readiness for HVM (Conference Presentation)
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Paper Abstract

Currently, we are supplying defect-free EUV mask for device development. This was one of the biggest challenges in the implementation of EUV lithography for high volume manufacturing (HVM). It became possible to hide all multi-layer defects by using defect avoidance technique through improvement of blank mask defectivity and development of actinic blank inspection tool. In addition, EUV pellicle is also considered as a requisite to guarantee predictable yield. Both development of mask shop tools and preparation of EUV scanner for pellicle are going well. However, still membrane needs to be much improved in terms of transmittance and robustness for HVM. At the conference, EUV mask readiness for HVM will be discussed including blank defect improvement, preparation of actinic tools and pellicle development.

Paper Details

Date Published: 16 October 2017
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Proc. SPIE 10451, Photomask Technology, 104510I (16 October 2017); doi: 10.1117/12.2280687
Show Author Affiliations
Heebom Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chang Young Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Donggun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Ji Hoon Na, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hwan-Seok Seo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Mun Ja Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung-Won Kwon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10451:
Photomask Technology
Peter D. Buck; Emily E. Gallagher, Editor(s)

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