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Proceedings Paper

Development of amorphous silicon based EUV hardmasks through physical vapor deposition
Author(s): Anuja De Silva; Yann Mignot; Luciana Meli; Scott DeVries; Yongan Xu; Indira Seshadri; Nelson M. Felix; Wilson Zeng; Yong Cao; Khoi Phan; Huixiong Dai; Christopher S. Ngai; Michael Stolfi; Daniel L. Diehl
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Paper Abstract

Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

Paper Details

Date Published: 16 October 2017
PDF: 14 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501A (16 October 2017); doi: 10.1117/12.2280607
Show Author Affiliations
Anuja De Silva, IBM Corp. (United States)
Yann Mignot, IBM Corp. (United States)
Luciana Meli, IBM Corp. (United States)
Scott DeVries, IBM Corp. (United States)
Yongan Xu, IBM Corp. (United States)
Indira Seshadri, IBM Corp. (United States)
Nelson M. Felix, IBM Corp. (United States)
Wilson Zeng, Applied Materials, Inc. (United States)
Yong Cao, Applied Materials, Inc. (United States)
Khoi Phan, Applied Materials, Inc. (United States)
Huixiong Dai, Applied Materials, Inc. (United States)
Christopher S. Ngai, Applied Materials, Inc. (United States)
Michael Stolfi, Applied Materials, Inc. (United States)
Daniel L. Diehl, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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