Share Email Print

Proceedings Paper

High-NA EUV lithography enabling Moore’s law in the next decade
Author(s): Jan van Schoot; Kars Troost; Frank Bornebroek; Rob van Ballegoij; Sjoerd Lok; Peter Krabbendam; Judon Stoeldraijer; Erik Loopstra; Jos P. Benschop; Jo Finders; Hans Meiling; Eelco van Setten; Bernhard Kneer; Peter Kuerz; Winfried Kaiser; Tilmann Heil; Sascha Migura; Jens Timo Neumann
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their activities on a EUV exposure tool with Numerical Aperture of 0.55. The purpose of this scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade. A novel, anamorphic lens design, capable of providing the required Numerical Aperture has been investigated; This lens will be paired with new, faster stages and more accurate sensors enabling Moore’s law economical requirements, as well as the tight focus and overlay control needed for future process nodes. The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling. Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution. This paper presents an overview of the target specifications, key technology innovations and imaging simulations demonstrating the advantages as compared to 0.33NA and showing the capabilities of the next generation EUV systems.

Paper Details

Date Published: 16 October 2017
PDF: 20 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500U (16 October 2017); doi: 10.1117/12.2280592
Show Author Affiliations
Jan van Schoot, ASML Netherlands B.V. (Netherlands)
Kars Troost, ASML Netherlands B.V. (Netherlands)
Frank Bornebroek, ASML Netherlands B.V. (Netherlands)
Rob van Ballegoij, ASML Netherlands B.V. (Netherlands)
Sjoerd Lok, ASML Netherlands B.V. (Netherlands)
Peter Krabbendam, ASML Netherlands B.V. (Netherlands)
Judon Stoeldraijer, ASML Netherlands B.V. (Netherlands)
Erik Loopstra, ASML Netherlands B.V. (Netherlands)
Jos P. Benschop, ASML Netherlands B.V. (Netherlands)
Jo Finders, ASML Netherlands B.V. (Netherlands)
Hans Meiling, ASML Netherlands B.V. (Netherlands)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Bernhard Kneer, Carl Zeiss SMT GmbH (Germany)
Peter Kuerz, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Tilmann Heil, Carl Zeiss SMT GmbH (Germany)
Sascha Migura, Carl Zeiss SMT GmbH (Germany)
Jens Timo Neumann, Carl Zeiss Oberkochen (Germany)

Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

© SPIE. Terms of Use
Back to Top