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Proceedings Paper

Pellicle films supporting the ramp to HVM with EUV
Author(s): P. J. van Zwol; M. Nasalevich; W. P. Voorthuijzen; E. Kurganova; A. Notenboom; D. Vles; M. Peter; W. Symens; A. J. M. Giesbers; J. H. Klootwijk; R. W. E. van de Kruijs; W. J. van der Zande
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Paper Abstract

EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.

Paper Details

Date Published: 16 October 2017
PDF: 9 pages
Proc. SPIE 10451, Photomask Technology, 104510O (16 October 2017); doi: 10.1117/12.2280560
Show Author Affiliations
P. J. van Zwol, ASML Netherlands B.V. (Netherlands)
M. Nasalevich, ASML Netherlands B.V. (Netherlands)
W. P. Voorthuijzen, ASML Netherlands B.V. (Netherlands)
E. Kurganova, ASML Netherlands B.V. (Netherlands)
A. Notenboom, ASML Netherlands B.V. (Netherlands)
D. Vles, ASML Netherlands B.V. (Netherlands)
M. Peter, ASML Netherlands B.V. (Netherlands)
W. Symens, ASML Netherlands B.V. (Netherlands)
A. J. M. Giesbers, Philips Research (Netherlands)
J. H. Klootwijk, Philips Research (Netherlands)
R. W. E. van de Kruijs, Univ. of Twente (Netherlands)
W. J. van der Zande, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 10451:
Photomask Technology
Peter D. Buck; Emily E. Gallagher, Editor(s)

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