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Proceedings Paper

Contrast matching of line gratings obtained with NXE3XXX and EUV- interference lithography
Author(s): Zuhal Tasdemir; Iacopo Mochi; Karen Garrido Olvera; Marieke Meeuwissen; Oktay Yildirim; Rolf Custers; Rik Hoefnagels; Gijsbert Rispens; Roberto Fallica; Michaela Vockenhuber ; Yasin Ekinci
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Paper Abstract

Extreme UV lithography (EUVL) has gained considerable attention for several decades as a potential technology for the semiconductor industry and it is now close to being adopted in high-volume manufacturing. At Paul Scherrer Institute (PSI), we have focused our attention on EUV resist performance issues by testing available high-performance EUV resists in the framework of a joint collaboration with ASML. For this purpose, we use the grating-based EUV-IL setup installed at the Swiss Light Source (SLS) at PSI, in which a coherent beam with 13.5 nm wavelength is used to produce a periodic aerial image with virtually 100% contrast and large depth of focus. Interference lithography is a relatively simple technique and it does not require many optical components, therefore the unintended flare is minimized and the aerial image is well-defined sinusoidal pattern. For the collaborative work between PSI and ASML, exposures are being performed on the EUV-IL exposure tool at PSI. For better quantitative comparison to the NXE scanner results, it is targeted to determine the actual NILS of the EUV-IL exposure tool at PSI. Ultimately, any resist-related metrology must be aligned and compared with the performance of EUV scanners. Moreover, EUV-IL is a powerful method for evaluating the resist performance and a resist which performs well with EUV-IL, shows, in general, also good performance with NXE scanners. However, a quantitative prediction of the performance based on EUV-IL measurements has not been possible due to the differences in aerial image formation. In this work, we aim to study the performance of EUV resists with different aerial images. For this purpose, after the real interference pattern exposure, we overlay a flat field exposure to emulate different levels of contrast. Finally, the results are compared with data obtained from EUV scanner. This study will enable not only match the data obtained from EUV- IL at PSI with the performance of NXE scanners, but also a better understanding of resist fundamentals by studying the effects of the aerial image on resist performance by changing the aerial image contrast in a controlled manner using EUV-IL.

Paper Details

Date Published: 16 October 2017
PDF: 10 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501T (16 October 2017); doi: 10.1117/12.2280541
Show Author Affiliations
Zuhal Tasdemir, Paul Scherrer Institute (Switzerland)
Iacopo Mochi, Paul Scherrer Institute (Switzerland)
Karen Garrido Olvera, ASML Netherlands B.V. (Netherlands)
Marieke Meeuwissen, ASML Netherlands B.V. (Netherlands)
Oktay Yildirim, ASML Netherlands B.V. (Netherlands)
Rolf Custers, ASML Netherlands B.V. (Netherlands)
Rik Hoefnagels, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Roberto Fallica, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber , Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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