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Proceedings Paper

Actinic inspection of EUV reticles with arbitrary pattern design
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Paper Abstract

The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.

Paper Details

Date Published: 16 October 2017
PDF: 10 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045007 (16 October 2017); doi: 10.1117/12.2280528
Show Author Affiliations
Iacopo Mochi, Paul Scherrer Institute (Switzerland)
Patrick Helfenstein, Paul Scherrer Institute (Switzerland)
Rajendran Rajeev, Paul Scherrer Institute (Switzerland)
Sara Fernandez, Paul Scherrer Institute (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institute (Switzerland)
Shusuke Yoshitake, NuFlare Technology, Inc. (Japan)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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