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Proceedings Paper

Development of the negative-tone molecular resists for EB/EUVL having high EUV absorption capacity and molecular design method
Author(s): Takashi Sato; Tomoaki Takigawa; Yuta Togashi; Takumi Toida; Masatoshi Echigo; Tetsuo Harada; Takeo Watanabe; Hiroto Kudo
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Paper Abstract

In this paper, we designed the synthesis of negative-type molecular resist materials for EB and EUVL exposure tools, and their properties were examined. The resist materials for EUVL have been required showing higher sensitivity for high throughput in the lithographic process, and expecting lower shot noise to improve a roughness. In EUVL process, the resist materials must be ionized by absorbing EUV to emit more secondary electrons. The EUV absorption of the synthesized resist materials was measured using their thin films on the silicon wafer, and it was observed that the ratio of EUV absorption of the synthesized resist was higher than in the comparison of that of PHS as a reference., i.e., 2.4 times higher absorption was shown. Furthermore, we examined the relationship between the ratios of EUV absorptions and functional groups of the resist materials. As the result, the sensitivity of resist materials under EUV exposure tool was consistent with their structures.

Paper Details

Date Published: 16 October 2017
PDF: 8 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501H (16 October 2017); doi: 10.1117/12.2280514
Show Author Affiliations
Takashi Sato, Mitsubishi Gas Chemical Co., Inc. (Japan)
Tomoaki Takigawa, Mitsubishi Gas Chemical Co., Inc. (Japan)
Yuta Togashi, Mitsubishi Gas Chemical Co., Inc. (Japan)
Takumi Toida, Mitsubishi Gas Chemical Co., Inc. (Japan)
Masatoshi Echigo, Mitsubishi Gas Chemical Co., Inc. (Japan)
Tetsuo Harada, Univ. of Hyogo (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Hiroto Kudo, Kansai Univ. (Japan)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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