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Proceedings Paper

Single-nm resolution techniques with DDR process and materials (Conference Presentation)
Author(s): Wataru Shibayama; Shuhei Shigaki; Satoshi Takeda; Makoto Nakajima; Rikimaru Sakamoto
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Paper Abstract

EUV lithography has been desired as the leading technology for 1x or single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off has been the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) & Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp1X nm L/S and single nm line patterning. Especially, semi iso 8nm line was successfully achieved with good LWR (2.5nm) and around 3 times aspect ratio. This single nm patterning technique also helped to enhance sensitivity about 33%. On the other hand, pillar patterning thorough CH pattern by applying DDRP also showed high resolution below 20nm pillar CD with good LCDU and high sensitivity. This new DDRP technology can be the promising approach not only for hp1Xnm level patterning but also single nm patterning in N7/N5 and beyond.

Paper Details

Date Published: 16 October 2017
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Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045019 (16 October 2017); doi: 10.1117/12.2280508
Show Author Affiliations
Wataru Shibayama, Nissan Chemical Industries, Ltd. (Japan)
Shuhei Shigaki, Nissan Chemical Industries, Ltd. (Japan)
Satoshi Takeda, Nissan Chemical Industries, Ltd. (Japan)
Makoto Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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