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Proceedings Paper

Applications of RCWA on EUV mask optics
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Paper Abstract

The oblique illumination in EUVL system combined with relative thick absorber layer of EUV mask introduces many new challenges for mask simulation, like asymmetric phase deformation, shadowing effects , secondary scattering. Besides, these effects result in the ineffectiveness of the Hopkins approach and require new method for mask diffraction computation. A 3D RCWA algorithm is implemented to perform rigorous computation of lights diffracted by the EUV masks. Several examples are designed, analyzed and presented in this paper. Furthermore, a fast version of the rigorous 3D algorithm is implemented by properly decomposing the 3D model into multiple simpler ones, thus the computational time is reduced.

Paper Details

Date Published: 16 October 2017
PDF: 9 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501X (16 October 2017); doi: 10.1117/12.2280445
Show Author Affiliations
Taian Fan, Institute of Microelectronics (China)
Lisong Dong, Institute of Microelectronics (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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