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Proceedings Paper

The update of resist outgas testing for metal containing resists at EIDEC
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Paper Abstract

The metal containing resist is one of the candidates for high sensitivity resists. EIDEC has prepared the infrastructure for outgas testing in hydrogen environment for metal containing resists at High Power EUV irradiation tool (HPEUV). We have experimentally obtained the preliminary results of the non-cleanable metal contamination on witness sample using model material by HPEUV [1]. The metal contamination was observed at only the condition of hydrogen environment. It suggested the generation of volatile metal hydrides by hydrogen radicals. Additionally, the metal contamination on a witness sample covered with Ru was not removed by hydrogen radical cleaning. The strong interaction between the metal hydride and Ru was confirmed by the absorption simulation. Recently, ASML announced a resist outgassing barrier technology using Dynamic Gas Lock (DGL) membrane located between projection optics and wafer stage [2], [3]. DGL membrane blocks the diffusion of all kinds of resist outgassing to the projection optics and prevents the reflectivity loss of EUV mirrors. The investigation of DGL membrane for high volume manufacturing is just going on. It extends the limitation of material design for EUV resists. However, the DGL membrane has an impact for the productivity of EUV scanners due to the transmission loss of EUV light and the necessity of periodic maintenance. The well understanding and control of the outgassing characteristics of metal containing resists may help to improve the productivity of EUV scanner. We consider the outgas evaluation for the resists still useful. For the improvement of resist outgas testing by HPEUV, there are some issues such as the contamination limited regime, the optimization of exposure dose to obtain the measurable contamination film thickness and the detection of minimum amount of metal related outgas species generated. The investigation and improvement for these issues are ongoing. The updates will be presented in the conference. This work was supported by Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO). [1] Eishi Shiobara, Shinji Mikami, Satoshi Tanaka, International Symposium on EUV Lithography, Hiroshima, Japan, P-RE-01, (2016). [2] Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last, Proc. of SPIE Vol. 10143, 101430D (2017). [3] Oktay Yildirim, Elizabeth Buitrago, Rik Hoefnagels, Marieke Meeuwissen, Sander Wuister, Gijsbert Rispens, Anton van Oosten, Paul Derks, Jo Finders, Michaela Vockenhuber, Yasin Ekinci, Proc. of SPIE Vol. 10143, 101430Q (2017).

Paper Details

Date Published: 16 October 2017
PDF: 11 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500Q (16 October 2017); doi: 10.1117/12.2280443
Show Author Affiliations
Eishi Shiobara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Shinji Mikami, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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