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Proceedings Paper

Implementation of CDSEM contour extraction on OPC verification
Author(s): Liang Cao; Jie Zhang; Hongxin Zhang; Jiechang Hou; Guoxiang Ning; William Wilkinson; Shaowen Gao; Norman Chen
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Paper Abstract

CDSEM metrology is a powerful tool to obtain silicon data. However, as our technology nodes advance shrink to 14nm and below, the CD measurement data from CDSEM can hardly provide sufficient information for OPC verification (OPCV) and the related silicon verification. On the other hand, the abundant information from CDSEM images has not been fully utilized to assist our data analysis. In this context, contour extraction emerges as the best method to obtain extensive information from CDSEM images, especially for 2D structures. This paper demonstrates that contour extraction bridges the gap between the needs of 2D characterization and the limited capability of CDSEM measurement. The extracted contour enables automatic identification of litho-hotspots using OPCV tools, especially for non-CD related hotspots. Statistical silicon data extraction and analysis on complex geometries is viable with extracted contours. The silicon data can then be feedback to the evolution of non-CD OPCV checks, where simple CD measurement is inadequate. Effective CD can also be calculated from the obtained 2D information, with which Bossung curves can be built and provide complementary information.

Paper Details

Date Published: 16 October 2017
PDF: 7 pages
Proc. SPIE 10451, Photomask Technology, 104510Z (16 October 2017); doi: 10.1117/12.2280422
Show Author Affiliations
Liang Cao, GLOBALFOUNDRIES Inc. (United States)
Jie Zhang, GLOBALFOUNDRIES Inc. (United States)
Hongxin Zhang, GLOBALFOUNDRIES Inc. (United States)
Jiechang Hou, GLOBALFOUNDRIES Inc. (United States)
Guoxiang Ning, GLOBALFOUNDRIES Inc. (United States)
William Wilkinson, GLOBALFOUNDRIES Inc. (United States)
Shaowen Gao, GLOBALFOUNDRIES Inc. (United States)
Norman Chen, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 10451:
Photomask Technology
Peter D. Buck; Emily E. Gallagher, Editor(s)

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