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Proceedings Paper

Measurement of through-focus EUV pattern shifts using the SHARP actinic microscope
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Paper Abstract

This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift in EUV lithography due to 3D mask effects are extracted from SHARP microscope images and benchmarked with pattern shift values determined by rigorous simulations.

Paper Details

Date Published: 16 October 2017
PDF: 6 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045008 (16 October 2017); doi: 10.1117/12.2280371
Show Author Affiliations
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Yulu Chen, GLOBALFOUNDRIES (United States)
Pawitter Mangat, GLOBALFOUNDRIES (United States)
Kenneth Goldberg, Ctr. for X-Ray Optics (United States)
Markus Benk, Ctr. for X-Ray Optics (United States)
Bryan Kasprowicz, Photronics, Inc. (United States)
Henry Kamberian, Photronics, Inc. (United States)
Jeremy McCord, Photronics, Inc. (United States)
Thomas Wallow, ASML Brion Technologies (United States)


Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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