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Proceedings Paper

Characterization of EBL2 EUV exposure facility
Author(s): Edwin te Sligte; Michel van Putten; Freek T. Molkenboer; Peter van der Walle; Pim M. Muilwijk; Norbert B. Koster; Jeroen Westerhout; Peter J. Kerkhof; Bastiaan W. Oostdijck; Wouter Mulckhuyse; Alex F. Deutz
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Paper Abstract

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray Photoelectron Spectroscopy system by an automated sample handler. The current contribution reports on the results of the qualification testing of the EUV beam line. Topics investigated include handling and position control, thermal management, a relevant gas environment, EUV irradiation and metrology, and first EUV exposures.

Paper Details

Date Published: 16 October 2017
PDF: 6 pages
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045027 (16 October 2017); doi: 10.1117/12.2280356
Show Author Affiliations
Edwin te Sligte, TNO (Netherlands)
Michel van Putten, TNO (Netherlands)
Freek T. Molkenboer, TNO (Netherlands)
Peter van der Walle, TNO (Netherlands)
Pim M. Muilwijk, TNO (Netherlands)
Norbert B. Koster, TNO (Netherlands)
Jeroen Westerhout, TNO (Netherlands)
Peter J. Kerkhof, TNO (Netherlands)
Bastiaan W. Oostdijck, TNO (Netherlands)
Wouter Mulckhuyse, TNO (Netherlands)
Alex F. Deutz, TNO (Netherlands)

Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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