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Proceedings Paper

Mask process correction method comparison and study: CD-SEM box versus standard correction method
Author(s): Mingjing Tian; Shizhi Lyu; Eric Guo; Ingo Bork; Peter Buck; Yifan Li; Delin Mo; Cong Lu; Kushlendra Mishra; Anil Parchuri
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Paper Abstract

With continuous shrinking technology nodes, the error tolerances for mask CD (critical dimension) becomes tighter and tighter since mask errors are passed on downstream and might even be amplified at wafer level. Therefore, high accuracy MPC (Mask Process Correction) models are imperative. Besides the mask model, the MPC algorithm for the input layout also has a critical influence on mask quality. This paper studies and compares two methods of MPC correction: a new method, introducing a correction algorithm based on the CD-SEM box is compared to the standard method that measures EPE (edge placement error) only at the center of an edge. Under which condition the EPE measurement method for MPC correction by the CD-SEM box method should be applied is discussed and its influence on the correction accuracy of small CD patterns is demonstrated.

Paper Details

Date Published: 16 October 2017
PDF: 6 pages
Proc. SPIE 10451, Photomask Technology, 104511T (16 October 2017); doi: 10.1117/12.2280280
Show Author Affiliations
Mingjing Tian, Semiconductor Manufacturing International Corp. (China)
Shizhi Lyu, Mentor Graphics Shanghai Electronic Technology Co., Ltd. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Ingo Bork, Mentor Graphics Corp. (United States)
Peter Buck, Mentor Graphics Corp. (United States)
Yifan Li, Semiconductor Manufacturing International Corp. (China)
Delin Mo, Semiconductor Manufacturing International Corp. (China)
Cong Lu, Semiconductor Manufacturing International Corp. (China)
Kushlendra Mishra, Mentor Graphics (India) Pvt. Ltd. (India)
Anil Parchuri, Mentor Graphics (India) Pvt. Ltd. (India)


Published in SPIE Proceedings Vol. 10451:
Photomask Technology
Peter D. Buck; Emily E. Gallagher, Editor(s)

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