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Proceedings Paper

Impact of defects on efficiency of light emitters (Conference Presentation)
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Paper Abstract

Nitride semiconductors are the key materials for solid-state lighting. Point defects may act as compensating centers, charge traps, or radiative or nonradiative recombination centers. Unintentional impurities often play an equally important role; for instance, carbon that is unavoidably incorporated during metal-organic chemical vapor deposition can act as a source of yellow luminescence. Theoretical advances now enable us to calculate the energetics as well as electronic and optical properties of point defects with unprecedented accuracy. We have developed a first-principles methodology to determine nonradiative carrier capture coefficients. Accurate calculations of electron-phonon coupling, combined with results for defect formation energies and charge-state transition levels, enable the calculation of nonradiative capture rates for electrons and holes and the evaluation of Shockley-Read-Hall coefficients. This approach allows us to identify specific defects that play a key role in limiting the efficiency of nitride semiconductor devices. ---Work performed in collaboration with A. Alkauskas, C. Dreyer, A. Janotti, J. Lyons, J. Shen, J. Speck, and D. Wickramaratne, and supported by DOE and NSF.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105540A (14 March 2018); doi: 10.1117/12.2280166
Show Author Affiliations
Chris G. Van de Walle, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 10554:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII
Jong Kyu Kim; Michael R. Krames; Martin Strassburg; Li-Wei Tu, Editor(s)

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