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Proceedings Paper

Characterizing electron beam induced damage in metrology and inspection of advance devices
Author(s): Abbas Mohtashami; Violeta Navarro; Hamed Sadeghian; Ilan Englard; Dror Shemesh; Nitin Singh Malik
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Paper Abstract

Using the electron beam (e-beam) as an advanced metrology tool in semiconductor manufacturing technologies has attracted many interests in the recent years. Owing to its high resolution and transparency to a wide range of materials including the metals, the e-beam shows a great promise to be used individually or in combination with the current optical metrology techniques in semiconductor industries. However, the e-beam can cause damages to the materials under inspection due to its relatively high energy. Therefore, determining the amount and type of damage as a result of the e-beam exposure is critical. Here, we present scanning probe microscopy techniques with the capability of measuring the e-beam induced damages on various materials. The experimental results of the e-beam induced damages on 300 mm silicon wafers covered by 1) patterned low-k material and 2) patterned low-k material filled with copper metal after chemical-mechanical polishing treatment are discussed. This method can be considered as a complementary approach to e-beam to ensure minimizing damage to the features.

Paper Details

Date Published: 28 September 2017
PDF: 7 pages
Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460U (28 September 2017); doi: 10.1117/12.2279707
Show Author Affiliations
Abbas Mohtashami, TNO (Netherlands)
Violeta Navarro, TNO (Netherlands)
Hamed Sadeghian, TNO (Netherlands)
Ilan Englard, Applied Materials Ltd. Israel (Israel)
Dror Shemesh, Applied Materials Ltd. Israel (Israel)
Nitin Singh Malik, Applied Materials Ltd. Israel (Israel)


Published in SPIE Proceedings Vol. 10446:
33rd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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