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Proceedings Paper

Ultra-high power semiconductor devices: heat-sinking using GaN-on-diamond
Author(s): Martin Kuball
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Paper Abstract

GaN devices when operated at high powers are limited by excessive temperature rise in the device critical regions. Traditionally SiC, Si or sapphire substrates or homoepitaxy on GaN substrates are used for the growth of GaN device structures, however, the substrate thermal conductivity is rather limited. Diamond substrates with their ultra-high thermal conductivity offer new opportunities for achieving ultra-high power GaN electronic microwave / RF devices, and optoelectronic devices. This is presently being explored within the UK EPSRC research program GaN-DaME.

Paper Details

Date Published: 6 September 2017
PDF: 5 pages
Proc. SPIE 10378, Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 103780A (6 September 2017); doi: 10.1117/12.2279182
Show Author Affiliations
Martin Kuball, Univ. of Bristol (United Kingdom)


Published in SPIE Proceedings Vol. 10378:
Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Nikolaus Dietz; Ian T. Ferguson, Editor(s)

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