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Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices
Author(s): Howard Mao; Badriyah Alhalaili; Ahmet Kaya; Daniel M. Dryden; Jerry M. Woodall; M. Saif Islam
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Paper Abstract

A very simple and inexpensive method for growing β-Ga2O3 films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga2O3 nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga2O3 film and nanowires.

Paper Details

Date Published: 21 September 2017
PDF: 9 pages
Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810B (21 September 2017); doi: 10.1117/12.2278843
Show Author Affiliations
Howard Mao, Univ. of California, Davis (United States)
Badriyah Alhalaili, Univ. of California, Davis (United States)
Ahmet Kaya, Univ. of California, Davis (United States)
Daniel M. Dryden, Univ. of California, Davis (United States)
Lawrence Livermore National Lab. (United States)
Jerry M. Woodall, Univ. of California, Davis (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 10381:
Wide Bandgap Power Devices and Applications II
Mohammad Matin; Srabanti Chowdhury; Achyut K. Dutta, Editor(s)

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