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Proceedings Paper

New PSM optimized for stable resolution of fine holes in FPD
Author(s): Nobuhisa Imashiki; Yutaka Yoshikawa; Michihiko Hayase
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Paper Abstract

Recently, due to increases in the definition of high function panels for mobile devices such as smartphones and tablets, LCD panel TFT and OLED (organic electro luminescence display) circuits are becoming increasingly denser and more miniaturized by the year. TFT and OLED circuits are composed of several layers, such as gate, semiconductor and contact hole (C / H). It is particularly difficult to obtain a stable resolution for C/H due to the decrease in the C/H process margin (EL, DOF, MEEF) as a result of increases in the density of the circuit. Moreover, C/H productivity has also markedly decreased due to an increase in the exposure dose. In response to this, attenuated phase shift mask (Att. PSM) for large size photomasks have been proposed as a means to improve the process margin in FPD. We have developed new PSM that can further improve the process margin and the productivity of C/H via the effective positioning of a high transmittance phase shift film. Using a 1.5um sized hole as the target, we confirmed the improvement effect of the optimized PSM via a software simulation and an exposure test. Hereafter it is necessary for us to optimize the new PSM for each panel process so as to allow us to use this mask in actual processes.

Paper Details

Date Published: 13 July 2017
PDF: 6 pages
Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 1045404 (13 July 2017); doi: 10.1117/12.2278689
Show Author Affiliations
Nobuhisa Imashiki, HOYA Corp. (Japan)
Yutaka Yoshikawa, HOYA Corp. (Japan)
Michihiko Hayase, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 10454:
Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology
Kiwamu Takehisa, Editor(s)

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