Proceedings PaperQuantum photoemission of confined non-linear optical materials
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The results of quantum confined III-V optoelectronic compounds form the special case of our generalized analysis. The photo emission has also been studied for quantum confined optoelectronic II-VI and stressed materials respectively. It has been found taking quantum confined CdGaAs2 and Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS and stressed InSb as examples that the photo emission exhibits plateaus as function of incident photon energy, which is important from experimental point of view, analogous to the same type of plateaus which have been observed in quantum Hall effect in the variation of the quantized Hall resistance with quantizing magnetic field.