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Proceedings Paper

Shock waves in binary oxides memristors
Author(s): Federico Tesler; Shao Tang; Vladimir Dobrosavljević; Marcelo Rozenberg
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Paper Abstract

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations.

Paper Details

Date Published: 7 September 2017
PDF: 7 pages
Proc. SPIE 10357, Spintronics X, 103572L (7 September 2017); doi: 10.1117/12.2277977
Show Author Affiliations
Federico Tesler, Univ. de Buenos Aires (Argentina)
CONICET (Argentina)
Shao Tang, Florida State Univ. (United States)
Vladimir Dobrosavljević, Florida State Univ. (United States)
Marcelo Rozenberg, Lab. de Physiques des Solides, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay (France)
Univ. of California, San Diego (United States)

Published in SPIE Proceedings Vol. 10357:
Spintronics X
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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