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Proceedings Paper

The influence of 1/ f noise on the electrical derivative initial peak of high-power semiconductor laser diodes
Author(s): Jinyuan Wang; Jian Guan; Shuxu Guo; Meili Xu; Fengli Gao
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Paper Abstract

We report a close connection between the fluctuation characteristics of the electrical derivative (ED) initial peaks and the 1/f noise intensities of different samples we found during the investigation of the 1/f noise origins of InGaAs quantum well high-power semiconductor laser diodes (LDs). We conduct contrast measurements on over fifty samples, where the current 1/f noise is measured under different bias currents, expressed by power spectrum density (PSD) and the EDs are computed from the current-voltage (I-V) measurement results. Then the influence of 1/f noise on the ED initial peaks is presented by comparing these parameters of different samples. The results show a clear pattern between the noise intensity and the ED initial peak fluctuation, and distinct differences between functional and aged LD devices, showing that ED initial peak can also be a non-destructive testing method for high power LD cavity damage and surface defects.

Paper Details

Date Published: 1 August 2017
PDF: 8 pages
Proc. SPIE 10339, Pacific Rim Laser Damage 2017: Optical Materials for High-Power Lasers, 103391V (1 August 2017); doi: 10.1117/12.2277597
Show Author Affiliations
Jinyuan Wang, Jilin Univ. (China)
Aviation Univ. Air Force (China)
Jian Guan, Jilin Univ. (China)
Shuxu Guo, Jilin Univ. (China)
Meili Xu, Jilin Univ. (China)
Fengli Gao, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 10339:
Pacific Rim Laser Damage 2017: Optical Materials for High-Power Lasers
Jianda Shao; Takahisa Jitsuno; Wolfgang Rudolph, Editor(s)

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