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Proceedings Paper

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications
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Paper Abstract

This paper presents a high-performance dc–dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Paper Details

Date Published: 23 August 2017
PDF: 8 pages
Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 103810H (23 August 2017); doi: 10.1117/12.2277175
Show Author Affiliations
Salah S. Alharbi, Univ. of Denver (United States)
Saleh S. Alharbi, Univ. of Denver (United States)
Ali M. S. Al-bayati, Univ. of Denver (United States)
Mohammad Matin, Univ. of Denver (United States)

Published in SPIE Proceedings Vol. 10381:
Wide Bandgap Power Devices and Applications II
Mohammad Matin; Srabanti Chowdhury; Achyut K. Dutta, Editor(s)

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