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Proceedings Paper

Defect-induced optical breakdown in aluminum nitride and gallium nitride epitaxial films
Author(s): Jae-Hyuck Yoo; Andrew P. Lange; Selim Elhadj
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Paper Abstract

We are investigating conductive gallium nitride films grown on c-plane sapphire for use in a new area of application, high-power optoelectronics. It was found that optically-induced damage in gallium nitride-based transparent conductive thin films occurs at incident laser intensities significantly greater than in conventional metal-oxide based thin films. Furthermore, damage in gallium nitride epi-layers displays a unique morphology consisting of discrete, faceted pits which appear to initiate within fast-grown layers when exposed to high intensity near-infrared laser irradiation. We developed an integrated laser damage system with in-situ diagnostics to probe this damage mode and conducted damage tests of aluminum nitride and gallium nitride/aluminum nitride samples grown under various conditions. Through in-depth analyses using optical microscopy and results from high-throughput damage tests, this paper elucidates some of the prevailing damage processes and design considerations for gallium nitride transparent conductive films important for emerging high-power laser applications.

Paper Details

Date Published: 23 August 2017
PDF: 13 pages
Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 1038107 (23 August 2017); doi: 10.1117/12.2277114
Show Author Affiliations
Jae-Hyuck Yoo, Lawrence Livermore National Lab. (United States)
Andrew P. Lange, Lawrence Livermore National Lab. (United States)
Selim Elhadj, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 10381:
Wide Bandgap Power Devices and Applications II
Mohammad Matin; Srabanti Chowdhury; Achyut K. Dutta, Editor(s)

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