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GaN laser diodes for quantum technologies
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; M. Leszczyński; P. Wisniewski; R. Czernecki; D. Schiavon
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Paper Abstract

GaN laser diodes has the potential to be a key enabling technology for a range of quantum technologies, including next generation optical atomic clocks and gravity sensors, based on cold-atom interferometry and also quantum communications, that have important applications for security and defence. Presently, such systems require a number of expensive, sophisticated and complex laser sources that limit quantum technologies to the laboratory. In contrast, GaN laser diode technology has the potential to provide a compact, rugged and reliable solutions, suitable for commercialisation. We report our latest results of GaN laser diodes suitable for both cold-atom interferometry and quantum communications.

Paper Details

Date Published: 5 October 2017
PDF: 8 pages
Proc. SPIE 10442, Quantum Information Science and Technology III, 104420N (5 October 2017); doi: 10.1117/12.2277001
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
S. Stanczyk, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
D. Schiavon, TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 10442:
Quantum Information Science and Technology III
Mark T. Gruneisen; Miloslav Dusek; John G. Rarity, Editor(s)

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