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Proceedings Paper

Rapid silicon carbide micro-crystal growth by high power CO2 laser
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Paper Abstract

This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.

Paper Details

Date Published: 23 August 2017
PDF: 5 pages
Proc. SPIE 10382, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI, 103820L (23 August 2017); doi: 10.1117/12.2276513
Show Author Affiliations
Haonan Zhou, The Pennsylvania State Univ. (United States)
Chang-Jiang Chen, The Pennsylvania State Univ. (United States)
Wenbin Zhu, The Pennsylvania State Univ. (United States)
Ju-Hung Chao, The Pennsylvania State Univ. (United States)
Stuart (Shizhuo) Yin, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 10382:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI
Shizhuo Yin; Ruyan Guo, Editor(s)

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