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Proceedings Paper

Monolithic integration of III-V nanostructures for electronic and photonic applications
Author(s): B. Mayer; S. Wirths; H. Schmid; S. Mauthe; C. Convertino; Y. Baumgartner; L. Czornomaz; M. Sousa; H. Riel; K. E. Moselund
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Paper Abstract

We have recently developed a novel III-V integration scheme, where III-V material is grown directly on top of Si within oxide nanotubes or microcavities which control the geometry of nanostructures. This allows us to grow III-V material non-lattice matched on any crystalline orientation of Si, to grow arbitrary shapes as well as abrupt heterojunctions, and to gain more flexibility in tuning of composition. In this talk, applications for electronic devices such as heterojunction tunnel FETs and microcavity III-V lasers monolithically integrated on Si will be discussed along with an outlook for the future.

Paper Details

Date Published: 25 August 2017
PDF: 5 pages
Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 103490L (25 August 2017); doi: 10.1117/12.2275871
Show Author Affiliations
B. Mayer, IBM Research - Zürich (Switzerland)
S. Wirths, IBM Research - Zürich (Switzerland)
H. Schmid, IBM Research - Zürich (Switzerland)
S. Mauthe, IBM Research - Zürich (Switzerland)
C. Convertino, IBM Research - Zürich (Switzerland)
Y. Baumgartner, IBM Research - Zürich (Switzerland)
L. Czornomaz, IBM Research - Zürich (Switzerland)
M. Sousa, IBM Research - Zürich (Switzerland)
H. Riel, IBM Research - Zürich (Switzerland)
K. E. Moselund, IBM Research - Zürich (Switzerland)


Published in SPIE Proceedings Vol. 10349:
Low-Dimensional Materials and Devices 2017
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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