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Charge carrier blocking layers for polymer-based electro-optic devices
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Paper Abstract

Electrical resistivity, electron and hole barrier heights and interfaces can significantly affect the efficiency of electric field poling of non-linear optic (NLO) polymers. A combination of uniformity of the electric field distribution, charge carrier blocking and behavior of NLO chromophores can be optimized by introducing buffer layers and/or charge carrier blocking layers between the NLO polymer core layer and the anode and cathode electrodes, maximizing the poling field, chromophore alignment, nonlinearity or electro-optic (EO) coefficient, r33, and yield of the poled NLO polymers.

Paper Details

Date Published: 12 October 2017
PDF: 4 pages
Proc. SPIE 10355, Nanobiosystems: Processing, Characterization, and Applications X, 103550C (12 October 2017); doi: 10.1117/12.2275826
Show Author Affiliations
Fahima Ouchen, Air Force Research Lab. (United States)
Emily Heckman, Air Force Research Lab. (United States)
François Kajzar, Univ. Politehnica of Bucharest (Romania)
Ileana Rau, Univ. Politehnica of Bucharest (Romania)
Larry Dalton, Univ. of Washington (United States)
James Grote, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 10355:
Nanobiosystems: Processing, Characterization, and Applications X
Norihisa Kobayashi; Fahima Ouchen; Ileana Rau, Editor(s)

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