Share Email Print
cover

Proceedings Paper

Progress in the room temperature operation of GaAs-based lateral-type spin-PD in near-infrared wavelength region
Author(s): R. C. Roca; N. Nishizawa; K. Nishibayashi; H. Munekata
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and fabricated experimentally. The light impinged on the side of the device is refracted and shed directly on the backside of a spin-detecting Fe contact where spin-polarized carriers are generated in a thin InGaAs active layer and injected in the Fe contact through a crystalline AlOx tunnel barrier. Experiments are carried out at room temperature with photocurrent set up with circular polarization spectrometry, through which light-helicity-dependent photocurrent component, ΔI, is obtained with the spin detection efficiency F ≈ 0.4 %, where F is the ratio between ΔI and total photocurrent. This value is the highest reported so far for lateral-type spin-photodiodes. It is discussed that improving the quality of the p-InGaAs/x-AlOx/Fe interfaces will give rise to higher F values.

Paper Details

Date Published: 6 September 2017
PDF: 9 pages
Proc. SPIE 10357, Spintronics X, 103571C (6 September 2017); doi: 10.1117/12.2275577
Show Author Affiliations
R. C. Roca, Tokyo Institute of Technology (Japan)
N. Nishizawa, Tokyo Institute of Technology (Japan)
K. Nishibayashi, Tokyo Institute of Technology (Japan)
H. Munekata, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 10357:
Spintronics X
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

© SPIE. Terms of Use
Back to Top