Share Email Print
cover

Proceedings Paper • new

Organic field-effect transistor nonvolatile memories: From fundamental understanding to prototype applications (Conference Presentation)
Author(s): Sui-Dong Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Organic nonvolatile memories can be key components toward future low-cost, light-weight, flexible and portable electronic products. The memories based on organic field-effect transistors (OFETs) possess advantages of nondestructive reading, capability to integrate data processing and storage, and compatibility with various substrates. OFET nonvolatile memories face the challenge of simultaneously achieving large memory window, high air stability, long retention time and good rewritable endurance. We firstly elucidate the charge trapping/detrapping mechanism in the memories by a variety of approaches [1-9], including (1) in-situ surface potential mapping, (2) design and tailoring of nano-floating-gate, (3) characterization on memory ambient stability, (4) light response of memory behaviors and (5) probing of current transition point. The charge trapping/detrapping mechanism turns out to be a complex process dependent on both external electrical/optical fields and internal material properties. Secondly, the OFET nonvolatile memories are demonstrated to be promising in the applications of multibit data storage and solar-blind photodetection. References: [1] Wang, S.; Gao, X.; Zhong, Y. N.; Zhang, Z. D.; Xu, J. L.; Wang, S. D. Appl. Phys. Lett. 2016, 109, 023301. [2] Liu, J.; Wang, C. H.; Liu, C. H.; Li, Q. L.; Gao, X.; Wang, S. D. Adv. Electron. Mater. 2016, 2, 1500349. [3] Zhang, J. Y.; Liu, L. M.; Gao, X.; Liu, C. H.; Liu, J.; Dong, B.; Wang, S. D. Org. Electron. 2015. 25, 324-328. [4] Cui, Z. Q.; Wang, S.; Chen, J. M.; Gao, X.; Dong, B.; Chi, L. F.; Wang, S. D. Appl. Phys. Lett. 2015. 106, 123303. [5] Liu, J.; Liu, C. H.; She, X. J.; Sun, Q. J.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2014. 105, 163302. [6] Gao, X.; Liu, C. H.; She, X. J.; Li, Q. L.; Liu, J.; Wang, S. D. Org. Electron. 2014. 15, 2486-2491. [7] She, X. J.; Liu, J.; Zhang, J. Y.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2013. 103, 143302. [8] She, X. J.; Liu, C. H.; Zhang, J. Y.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2013. 102, 053303. [9] Gao, X.; She, X. J.; Liu, C. H.; Sun, Q. J.; Liu, J.; Wang, S. D. Appl. Phys. Lett. 2013. 102, 023303.

Paper Details

Date Published: 19 September 2017
PDF
Proc. SPIE 10366, Hybrid Memory Devices and Printed Circuits 2017, 103660A (19 September 2017); doi: 10.1117/12.2275575
Show Author Affiliations
Sui-Dong Wang, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 10366:
Hybrid Memory Devices and Printed Circuits 2017
Emil J. W. List-Kratochvil, Editor(s)

© SPIE. Terms of Use
Back to Top