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Multi-physics simulation of monolithic tantalum oxide memristor-selector structures illustrating negative differential resistance (Conference Presentation)
Author(s): John F. Sevic; Nobuhiko Kobayashi
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Paper Abstract

Self-assembled niobium dioxide (NbO2 ) thin-film selectors self-aligned to tantalum dioxide (TaO2) memristive memory cells are studied by a multi-physics simulation of the mass transport equation coupled to the current continuity equation and heat equation. While a compact circuit model can resolve quasi-static negative differential resistance (NDR), a self-consistent coupled transport formulation provides a non-equilibrium picture of NbO2-TaO2 selector-memristor operation ab initio. By employing the drift-diffusion transport approximation, a finite element method is used to study dynamic electrothermal behavior of our experimentally obtained selector-memristor devices, showing bulk conditions exist favorable for electroformation of NbO2 selector thin-films. Simulation results suggest Poole-Frenkel defects introduce negative differential resistance, in agreement with our measured results.

Paper Details

Date Published: 21 September 2017
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Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 103490Z (21 September 2017); doi: 10.1117/12.2275219
Show Author Affiliations
John F. Sevic, Univ. of California, Santa Cruz (United States)
Nobuhiko Kobayashi, Univ. of California, Santa Cruz (United States)


Published in SPIE Proceedings Vol. 10349:
Low-Dimensional Materials and Devices 2017
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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