Share Email Print
cover

Proceedings Paper

An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology
Author(s): Firat Tankut; Mustafa H. Cologlu; Hidir Askar; Hande Ozturk; Hilal K. Dumanli; Feyza Oruc; Bilge Tilkioglu; Beril Ugur; Orhan Sevket Akar; Murat Tepegoz; Tayfun Akin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper introduces an 80x80 microbolometer array with a 35 μm pixel pitch operating in the 8-12 μm wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer approaches, MikroSens’ CIR detector technology does not require the use of special high TCR materials like VOx or a-Si, instead, it allows to implement microbolometers with standard CMOS layers, where the suspended bulk micromachined structure is obtained by only few consecutive selective MEMS etching steps while protecting the wirebond pads with a simple lithograpy step. This approach not only reduces the fabrication cost but also increases the production yield. In addition, needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The CIR approach is used to implement an 80x80 FPA with 35 μm pixel pitch, namely MS0835A, using a 0.18 μm CMOS process. The fabricated sensor is measured to provide NETD (Noise Equivalent Temperature Difference) value of 163 mK at 17 fps (frames per second) and 71 mK at 4 fps with F/1.0 optics in a dewar environment. The measurement results of the wafer level vacuum packaged sensors with one side AR coating shows an NETD values of 112 mK at 4 fps with F/1.1 optics, i.e., demonstrates a good performance for high volume low-cost applications like advanced presence detection and human counting applications. The CIR approach of MikroSens is scalable and can be used to reduce the pixel pitch even further while increasing the array size if necessary for various other low-cost, high volume applications.

Paper Details

Date Published: 31 May 2017
PDF: 10 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771X (31 May 2017); doi: 10.1117/12.2275161
Show Author Affiliations
Firat Tankut, MikroSens Elektronik San ve Tic A.S. (Turkey)
Mustafa H. Cologlu, MikroSens Elektronik San ve Tic A.S. (Turkey)
Hidir Askar, MikroSens Elektronik San ve Tic A.S. (Turkey)
Hande Ozturk, MikroSens Elektronik San ve Tic A.S. (Turkey)
Hilal K. Dumanli, MikroSens Elektronik San ve Tic A.S. (Turkey)
Feyza Oruc, MikroSens Elektronik San ve Tic A.S. (Turkey)
Bilge Tilkioglu, MikroSens Elektronik San ve Tic A.S. (Turkey)
Beril Ugur, MikroSens Elektronik San ve Tic A.S. (Turkey)
Orhan Sevket Akar, MikroSens Elektronik San ve Tic A.S. (Turkey)
Murat Tepegoz, MikroSens Elektronik San ve Tic A.S. (Turkey)
Tayfun Akin, MikroSens Elektronik San ve Tic A.S. (Turkey)


Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top