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Proceedings Paper

Theory of unidirectional magnetoresistance in magnetic heterostructures
Author(s): Steven S.-L. Zhang; Giovanni Vignale
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Paper Abstract

We present a general drift-diffusion theory beyond linear response to explain the unidirectional magnetoresistance (UMR) observed in recent experiments in various magnetic heterostructures. In general, such nonlinear magnetoresistance may originate from the concerted action of current-induced spin accumulation and spin asymmetry in electron mobility. As a case study, we calculate the UMR in a bilayer system consisting of a heavy-metal (HM) and a ferromagnetic metal (FM), where the spin accumulation is induced via the spin Hall effect in the bulk of the HM layer. Our previous formulation [cf. PRB 94, 140411(R) (2016)] is generalized to include the interface resistance and spin memory loss, which allows us to analyze in details their effects on the UMR. We found that the UMR turns out to be independent of the spin asymmetry of the interfacial resistance, at variance with the linear giant-magnetoresistance (GMR) effect. A linear relation between the UMR and the conductivity-spin asymmetry is revealed, which provides an alternative way to control the sign and magnitude of the UMR and hence may serve as an experimental signature of our proposed mechanism.

Paper Details

Date Published: 5 September 2017
PDF: 11 pages
Proc. SPIE 10357, Spintronics X, 1035707 (5 September 2017); doi: 10.1117/12.2275154
Show Author Affiliations
Steven S.-L. Zhang, Argonne National Lab. (United States)
Univ. of Missouri (United States)
Giovanni Vignale, Argonne National Lab. (United States)


Published in SPIE Proceedings Vol. 10357:
Spintronics X
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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