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Proceedings Paper

Growth and characterization of GaN/InN/GaN heterostructures on GaN substrate templates using migration-enhanced, plasma-assisted MOCVD
Author(s): Daniel Seidlitz; Brendan Cross; Viktoriia E. Babicheva; Yohannes Abate; Axel Hoffmann; Nikolaus Dietz
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Proc. SPIE 10378, Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 103780B; doi: 10.1117/12.2274051
Show Author Affiliations
Daniel Seidlitz, Georgia State Univ. (United States)
Brendan Cross, Georgia State Univ. (United States)
Viktoriia E. Babicheva, Georgia State Univ. (United States)
Yohannes Abate, Georgia State Univ. (United States)
Axel Hoffmann, Technische Univ. München (Germany)
Nikolaus Dietz, Georgia State Univ. (United States)


Published in SPIE Proceedings Vol. 10378:
Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Nikolaus Dietz; Ian T. Ferguson, Editor(s)

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