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Proceedings Paper

III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics
Author(s): R. Paiella; H. Durmaz; F. F. Sudradjat; D. Nothern; G. C. Brummer; W. Zhang; J. Woodward; T. D. Moustakas
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Paper Abstract

We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semipolar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.

Paper Details

Date Published: 29 August 2017
PDF: 6 pages
Proc. SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 103530I (29 August 2017); doi: 10.1117/12.2274040
Show Author Affiliations
R. Paiella, Boston Univ. (United States)
H. Durmaz, Boston Univ. (United States)
Recep Tayyip Erdoğan Univ. (Turkey)
F. F. Sudradjat, Boston Univ. (United States)
D. Nothern, Boston Univ. (United States)
G. C. Brummer, Boston Univ. (United States)
W. Zhang, Boston Univ. (United States)
J. Woodward, Boston Univ. (United States)
T. D. Moustakas, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 10353:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017
Manijeh Razeghi; Oleg Mitrofanov; José Luis Pau Vizcaíno; Chee Hing Tan, Editor(s)

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